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  Datasheet File OCR Text:
 30
20 10V 3V 4V Vgs =2V 15 Vgs=5V
20
Id(A)
Id(A)
10 Vgs =1.5V
10
5
125C 25C
0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristi cs
0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics
50 40
1.6
Normalize ON-Resistance
Vgs=1.8V Id=2A 1.4 Vgs=4.5V Id=6.6A 1.2 Id=7A Vgs=2.5V Id=5.5A Vgs=10V 1.0
Rds(on)(m:)
Vgs =1.8V 30
Vgs =2.5V Vgs =4.5V
20 10 0 0 5 10 15 20 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs =10V
0.8 0 50 100 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
80 Id=7A 70
1E+01 1E+00 1E-01 125C
Rds(on)(m:)
60
Is(A)
50 40 30 20 10 0 2 4 25C
125C
1E-02 1E-03 1E-04 1E-05 25C
6
8
0.0
0.2
0.4
0.6
0.8
1.0
Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd(Volts) Figure 6: Body-Diode Characteristics
5 Vds=10V 4
1400
Id=7A
Capacitance (pF)
1200 1000 800 600 400 200 0 Crss Coss Ciss
Vgs(Volts)
3
2
1
0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
Vds(Volts) Figure 8: Capacitance Characteristics
100 Tj(max)=150C, Ta=25C Rds(on) limited 10Ps
40 Tj(max)=150C Ta=25C
30
Id (Amps)
100Ps 1ms 1 DC 10s 0.1 0.1 1 10 1s 100 10ms 100m
Power (W)
10
20
10
0 0.001
Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=83C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pd 0.1 Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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